Effect of ALD oxidant and channel doping on positive bias stress characteristics of surface channel In0.53Ga0.47As nMOSFETs

摘要

Atomic layer deposition (ALD) Al2O3/ZrO2 on In0.53Ga0.47As surface channel transistors with an O3 or H2O oxidant were subjected to positive bias stress with threshold voltage (Vt) and transconductance (gm,max) monitoring. Results show negative charge trapping with positive Vt shifts and possible gm,max degradation, which suggest interface degradation. Similar trends are observed in transistors with different channel doping, for which the higher doped devices experience more degradation when accelerated channel carriers increase damage at the interface.