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Voltage conditioning effect on CuCr contacts

机译:电压调节对CuCr触点的影响

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A dc field emission scanning microscope (FESM) was used to characterize the electron emission current of CuCr25 sintered contacts. Field emission scans at 20-50 MV/m using a truncated cone anode of 300 μm in diameter localized emitting defects with a positioning accuracy of ~150 μm in the measured area (~25 mm2) of the contact. The strongest activation of emitters was noticed at 30-40 MV/m resulting in 15 emitters at 50 MV/m. Afterwards, the I(E)-characteristic of the 10 dominant emission sites was measured locally. Two different types of emission could be observed: a normal Fowler-Nordheim-like emission where the current depends only on the applied voltage, and an abnormal emission where the current shows a strong hysteresis between the rising voltage branch and the decreasing voltage branch. The abnormal behavior can lead to an emission current increase once a critical electric field is exceeded. Possible surface effects influencing the emission current are either open pores or dielectric inclusions at the grain boundaries. The field emission enhancement factor β of these sites vary from 115 to 300 similar to values reported before. The number density of emitters is well above 0.5/mm2. In sealed vacuum interrupters only one emitter is active at a specific moment in time, shadowing the other emitters.
机译:使用直流场发射扫描显微镜(FESM)表征CuCr25烧结触点的电子发射电流。使用直径为300μm的截头圆锥形阳极以20-50 MV / m进行场发射扫描,该局部发射缺陷在触点的测量区域(〜25 mm2)中具有〜150μm的定位精度。在30-40 MV / m处发现了最强的发射器激活,从而在50 MV / m时产生15个发射器。之后,对10个主要发射点的I(E)特性进行局部测量。可以观察到两种不同类型的发射:正常的Fowler-Nordheim型发射,其中电流仅取决于施加的电压;以及异常发射,其中电流在上升的电压分支和下降的电压分支之间显示出很强的磁滞现象。一旦超过临界电场,异常行为会导致发射电流增加。影响发射电流的可能的表面效应是晶粒边界处的开孔或介电夹杂物。这些位点的场发射增强因子β在115到300之间变化,与之前报道的值相似。发射器的数量密度远高于0.5 / mm2。在密封的真空灭弧室中,只有一个发射器在特定的时间处于活动状态,从而遮蔽了其他发射器。

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