Effects of stacking passivation structure with interface tuning layer for crystalline Si solar cell applications

摘要

We fabricated YO-ZrO composition film (YZO) on AlO for the field effect passivation with high negative fixed charge densities on p-type Si. The surface recombination velocity was improved down to 30 cm/s after annealing at 400 °C. High thermal tolerance was confirmed over 600 °C by inserting 2-nm-thick ZrO layer between YZO and AlO interface. This result showed ZrO layer work as protecting barrier of Al and Y interdiffusions.