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Electron Energy Relaxation in (Cd_(1-x)Zn_x)_3As_2 Dirac Semimetals Studied by Terahertz Laser Pulses

机译:Electron Energy Southation(CD_(1-x)zn_x)_3as_2 Dirac Semimetgs由太赫兹激光脉冲研究

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We performed a study of a range of (Cd_(1-x)Zn_x)_3As_2 mixed crystals undergoing a transition from the Dirac semimetal phase to trivial semiconductor at variation of the composition x. We show that for the Dirac semimetal phase, the photoelectromagnetic effect amplitude is defined by the number of incident radiation quanta, whereas for the trivial semiconductor phase, it depends on the power in a laser pulse irrespective of its wavelength. We assume that such behavior is attributed to formation of surface electron states with a spin texture in Dirac semimetals.
机译:我们执行了一种(CD_(1-x)zn_x)_3as_2混合晶体的一系列(CD_(1-x)zn_x)_3as_2混合晶体,其在组合物x的变化下经历从DIAC Semimetal阶段到微型半导体的转变。我们表明,对于狄拉克半阶段,光电磁效应幅度由入射辐射量子的数量限定,而对于琐碎的半导体阶段,它根据其波长而取决于激光脉冲中的功率。我们假设这种行为归因于在Dirac半球中的旋转纹理形成表面电子状态。

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