Spin polarized photoemission from strained Ge epilayers grown by low-energy plasma-enhanced CVD (LEPECVD)

摘要

We present spin polarized photoemission experiments (SPPE) on strained Ge/SiGe/Si(001) layers. SPPE indicates that compressive bi-axial strain effectively lifts the HH-LH degeneracy raising the polarization of injected electrons above the P=50% limit of bulk material.