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A study on the fabrication and characterization of alumina electrostatic chuck for silicon wafer processing

机译:硅片加工用氧化铝静电吸盘的制备与表征

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Alumina electrostatic chucks for silicon wafer processing with wide range of electrical resistivity were fabricated by controlling the content of TiO/sub 2/ in alumina (0 wt%, 1.3 wt%, 2 wt%, and 2.8 wt%). The dependence of electrostatic force on applied voltage, temperature and humidity was investigated. In addition, response characteristics on applied voltage and relationship between electrical resistivity and electrostatic force characteristics such as Coulomb force and Johnsen-Rahbeck force were discussed.
机译:通过控制氧化铝中的TiO / sub 2 /的含量(0 wt%,1.3 wt%,2 wt%和2.8 wt%),制造了具有广泛电阻率的硅晶片加工用氧化铝静电吸盘。研究了静电力对施加电压,温度和湿度的依赖性。此外,还讨论了施加电压的响应特性以及电阻率和静电力特性(例如库仑力和约翰森-拉贝克力)之间的关系。

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