Component e.g. silicon on insulator component, fabrication method for e.g. high speed processor fabrication, involves pulverizing single-crystal silicon target on silicon wafer to create oxide layer on wafer for forming insulating layer

摘要

The method involves pulverizing a single-crystal silicon target on a single-crystal silicon wafer (10) so as to create an oxide layer on the wafer for forming an insulating layer (12). Silicon of the target is pulverized on the oxide layer, and a single-crystal silicon or germanium layer (14) is superimposed on the insulating layer. A passivation layer is deposited on the single-crystal silicon or germanium layer. An independent claim is also included for a component.