Leak current characterization in high frequency operation of CMOS circuits fabricated on SOI substrate

摘要

Threshold voltage shift in high frequency operation of CMOS/SOI is experimentally studied, using supply current measurement of inverter chains as test structures. For a large supply voltage the electron-hole generation current becomes dominant, resulting in a lower threshold voltage, while the threshold voltage becomes higher than the DC case for a low supply voltage. This method will be useful as a measure of "substrate current" for floating body CMOS/SOI.