Intracavity stimulated Raman scattering in Nd:LSB-Cr:YAG microchip lasers

摘要

The results of farther detailed investigations of passive Q-switch Raman microchip lasers based on Nd:LSB crystal with Ba(NO_3)_2, BaWO_4 and KGd(WO_4)_2 crystals as intracavity Raman media are presented. It is shown that intracavity stimulated Raman scattering (SRS) in microchip lasers is very simple and efficient method for generation of high power pulses with duration comparable to ones reaching under more technically complicated mode-locking regime. Modeling output energy parameters and emission kinetics of Nd:LSB microchip laser with intracavity SRS on the base of enhanced theoretical model of Q-switch Raman microchip lasers operation taking into account cross-section intensity distribution of pump, laser and Stokes modes, thermalization processes of activator ions on upper and lower multiplet levels and features of saturable absorber intracavity bleaching at spatially nonhomogeneous laser mode has shown good agreement with experimental results.