SIMULATION STUDY ON BREAKDOWN BEHAVIOR OF FIELD- PLATE SiC MESFETs

摘要

The effects of field-plate structures on SiC MESFETs were investigated using two-dimensional simulations. The simulation results without a field-plate were in good agreement with the characteristics of fabricated SiC MESFETs. The breakdown voltage was increased by 80 % when the optimum field-plate was applied to the device with a 0.5 μm long gate and a 1 μm spacing between gate and drain; a breakdown voltage of 240 - 250 V was obtained from a 0.35 μm field-plate, while 140 V was obtained without a field-plate.