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A methodology for propagating design tolerances to shape tolerances for use in manufacturing

机译:一种将设计公差传播到形状公差以用于制造的方法

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The move to low-k1 lithography makes it increasingly difficult to print feature sizes which are a small fraction of the wavelength of light. Manufacturing processes currently treat a target layout as a fixed requirement for lithography. However, in reality layout features may vary within certain bounds without violating design constraints. The knowledge of such tolerances, coupled with models for process variability, can help improve the manufacturability of layout features while still meeting design requirements. In this paper, we propose a methodology to convert electrical slack in a design to shape slack or tolerances on individual layout shapes using a two-phase approach. In the first step, we redistribute delay slack to generate delay bounds on individual cells using linear programming. In the second phase, which is solved as a quadratic program, we convert these delay bounds to shape tolerances to maximize the process window of each shape. The shape tolerances produced by our methodology can be used within a process-window optical proximity correction (PWOPC) flow to reduce delay errors arising from variations in the lithographic process. Our experiments on 45 nm SOI cells using accurate process models show that the use of our shape slack generation in conjunction with PWOPC reduces delay errors from 3.6% to 1.4%, on average, compared to the simplistic way of tolerance band generation.
机译:转向低k1光刻技术使打印尺寸仅为光波长一小部分的特征尺寸变得越来越困难。当前,制造工艺将目标布局视为光刻的固定要求。然而,实际上,布局特征可以在一定范围内变化而不会违反设计约束。这种公差的知识,再加上过程可变性的模型,可以帮助改善版图特征的可制造性,同时仍然满足设计要求。在本文中,我们提出了一种使用两阶段方法将设计中的电气松弛转换为形状松弛或单个布局形状公差的方法。在第一步中,我们使用线性编程重新分配延迟余量以在单个单元上生成延迟边界。在第二阶段(以二次程序解决)中,我们将这些延迟范围转换为形状公差,以最大化每个形状的处理窗口。我们的方法所产生的形状公差可在工艺窗口光学邻近校正(PWOPC)流程中使用,以减少由光刻工艺变化引起的延迟误差。我们使用精确的工艺模型在45 nm SOI电池上进行的实验表明,与简单的公差带生成方法相比,将我们的形状松弛生成与PWOPC结合使用可使延迟误差平均降低了3.6%至1.4%。

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