Carbon nanotube circuits: Living with imperfections and variations

摘要

Carbon Nanotube Field-Effect Transistors (CNFETs) can potentially provide significant energy-delay-product benefits compared to silicon CMOS. However, CNFET circuits are subject to several sources of imperfections. These imperfections lead to incorrect logic functionality and substantial circuit performance variations. Processing techniques alone are inadequate to overcome the challenges resulting from these imperfections. An imperfection-immune design methodology is required. We present an overview of imperfection-immune design techniques to overcome two major sources of CNFET imperfections: metallic Carbon Nanotubes (CNTs) and CNT density variations.