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An efficient distributed memory interface for many-core platform with 3D stacked DRAM

机译:具有3D堆叠DRAM的多核平台的高效分布式内存接口

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Historically, processor performance has increased at a much faster rate than that of main memory and up-coming NoC-based many-core architectures are further tightening the memory bottleneck. 3D integration based on TSV technology may provide a solution, as it enables stacking of multiple memory layers, with orders-of-magnitude increase in memory interface bandwidth, speed and energy efficiency. To fully exploit this potential, the architectural interface to vertically stacked memory must be streamlined. In this paper we present an efficient and flexible distributed memory interface for 3D-stacked DRAM. Our interface ensures ultra-low-latency access to the memory modules on top of each processing element (vertically local memory neighborhoods). Communication to these local modules do not travel through the NoC and takes full advantage of the lower latency of vertical interconnect, thus speeding up significantly the common case. The interface still supports a convenient global address space abstraction with high-latency remote access, due to the slower horizontal interconnect. Experimental results demonstrate significant bandwidth improvement that ranges from 1.44× to 7.40× as compared to the JEDEC standard, with peaks of 4.53 GB/s for direct memory access, and 850 MB/s for remote access through the NoC.
机译:从历史上看,处理器性能的提高速度比主存储器快得多,并且即将到来的基于NoC的多核体系结构进一步加剧了存储瓶颈。基于TSV技术的3D集成可以提供一种解决方案,因为它可以堆叠多个内存层,并且内存接口带宽,速度和能源效率在数量级上增加。为了充分利用这一潜力,必须简化与垂直堆叠内存的架构接口。在本文中,我们提出了一种用于3D堆栈DRAM的高效灵活的分布式内存接口。我们的界面可确保以超低延迟访问每个处理元素(垂直本地内存邻域)上的内存模块。与这些本地模块的通信不会通过NoC传输,并充分利用了垂直互连的较低延迟,从而大大加快了常见情况。由于水平互连速度较慢,该接口仍支持具有高延迟远程访问的便捷全局地址空间抽象。实验结果表明,与JEDEC标准相比,带宽显着提高,从1.44μs到7.40μs不等,用于直接内存访问的峰值为4.53 GB / s,并且为850 MB / s用于通过NoC进行远程访问。

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