Transport properties of ultra thin oxide gated Si SET near room temperature

摘要

We have fabricated ultrathin oxide (thickness) of ∼6 nm gated silicon transistors with a point-contact junction of ∼20 nm thick, and 20 nm wide to explore single electron charging effects near room temperature. Current-voltage (I-V) measurements show clear periodic oscillations and a dramatic collapse of peak's maximum at various temperatures. Analysis of energy spacing relates the charging energy to a dot of ∼8 nm in size and also suggesting tunneling is via the first excited state. These low-power ∼30 pW and low cost devices can be very useful for the next generation nanoelectronics.