Simulation of anti reflection coating (ARC) based GaAs solar cell with homo-hetero junction

摘要

In this work an ARC based GaAs solar cell having both homojunction and heterojunction has been simulated. The cell structure consist of TCO/a-Si:H(p)/GaAs(p)/GaAs(n)/a-Si:H(n)/TCO. The structure has been simulated using Silvaco TCAD. This structure gives higher fill factor due to the reduced series resistance and hence results better efficiency. The work function of the transparent conductive oxide (TCO) also plays a key role for enhancement of the cell performance. For the present model the calculated efficiency is found about thirty four percent.