Physical Analysis of Gate-Source Voltage Dependencies of Parasitic Capacitors, and Their Impacts on Switching Behavior of a Discrete Silicon-Carbide MOSFET

摘要

This paper describes a physical analysis of gate-source voltage (VGs) dependencies of parasitic capacitors of a discrete Silicon-Carbide (SiC) MOSFET. A new picture of depletion region that induces the parasitic capacitors is proposed. The proposed picture successfully explains the origins and the intrinsic relations of the $v_{GS}$ -dependencies of the parasitic capacitors. Subsequently, the effects of the VGS dependent models are considered via the detailed analysis of the switching waveforms, which clarifies their individual impacts on the switching waveforms.