摘要：
低压化学气相淀积氮化硅薄膜,是集成电路制造工艺的基础工序之一,氮化硅薄膜的颗粒度、折射率是影响薄膜质量的重要参数.低压淀积氮化硅薄膜反应过程中的副产物NH4Cl是影响氮化硅薄膜颗粒的主要因素,副产物过多导致氮化硅薄膜中产生富硅现象,使折射率高于2.0,导致腐蚀氮化硅的速率较慢,影响腐蚀效果.在CMOS集成电路标准工艺中,低压淀积Si3N4薄膜的表面颗粒直接影响LOCOS工艺鸟嘴大小、离子注入掩蔽效果;在光电产品的增透膜工步中,Si3N4薄膜的颗粒更是影响光电转换效率的主要因素.使用新工艺方法,在不改变反应温度、反应腔体尺寸的同时,调整反应气体流量、反应腔体压力,解决了氮化硅薄膜反应中副产物NH4Cl过多的问题,通过膜厚测试仪、应力测试仪的测试,曲线拟合良好.%Low pressure chemical vapor deposition silicon nitride thin film is one of the basic pro-cesses of integrated circuit manufacturing process. The particle size and refractive index of Si3N4 thin film are important parameters that affect the quality of thin films. The by-product NH4Cl reaction process of low voltage deposition of silicon nitride film, is the main factor affecting the silicon nitride film particles, by-product too much at the same time, resulting in silicon rich phenomenon and the refractive index is higher than that of the 2.0 of silicon nitride thin films, resulting in slower corrosion rate of corrosion of silicon nitride, affect the corrosion rate and corrosion effect. CMOS integrated circuit technology in low voltage standard Si3N4deposition step, the surface of granular films directly affect the beak size, ion im-plantation LOCOS process masking effect in optoelectronic products; antireflection coating step, Si3N4 film particles are the main factors affecting the photoelectric conversion efficiency.The use of new technology, without changing the reaction temperature and body size at the same time, the adjustment of the reaction gas flow rate, reaction chamber pressure, solves the by-product of silicon nitride film in response to NH4Cl too much problem,through the film thickness testing,stress testing,curve fitting is good.
