irradiation

摘要： Grain boundaries(GBs)can serve as effective sinks for radiation-induced defects,thus notably influencing the service performance of materials.However,the effect of GB structures on the zero-dimensional defects induced by irradiation has not been fully elucidated.Here,the evolution of cascade collision in the single-crystal(SC),bicrystalline(BC),and twinned crystalline(TC)copper is studied by atomic simulations during irradiation.The spatial distributions of vacancies and interstitials are closely related to the GB at a certain primary knock-on atom(PKA)energy.Compared with the TC,the BC displays a more obvious segregation of the interstitial atoms near GB,due to the characteristic of the greater interstitial binding energy.The evolution of Frenkel pairs is more sensitive to the change of the GB position in the BC.A more prominent defect annihilation rate is caused by the effect of the GB than that of the twin boundary(TB).The marked secondary emission phenomenon has been observed in the BC,which promotes the formation of an inverted pagoda-like defect distribution.There are similar sub-conical defect distributions and microstructures induced by cascade collision in the TC and the SC.It has been found that the influence range of the GB is wider in the BC.Meanwhile,the average flow stress of the irradiated copper is quantitatively calculated by establishing a physical strengthening model.The contribution of vacancy to the average flow stress in the irradiated BC and TC is obvious than that in the SC,due to the formation of many vacancies.This study provides a theoretical basis for further understanding and customization of the metal-based equipment with good radiation resistance.

摘要： This work concerns the 10? North, 20? North African band. Area renowned for having some of the poorest countries in the world. It is also home to the Sahelian strip and part of the Sahara. The countries in this zone have a relatively low electrification rate compared to the enlightened country. To solve this problem, these countries want to turn to renewable energies such as photovoltaics (renewable energy obtained through solar radiation). Therefore, understanding the behavior of irradiation and cloudiness in the 10 - 20 band becomes necessary. The application of the empirical orthogonal functions to the different cloud layers and to the irradiation reveals a seasonality of the latter, in particular compared to the first modes of the empirical orthogonal functions (EOF1). Indeed, by filtering in time and space to isolate solar radiation and cloudiness, the EOF1 expresses respectively 94.3% of the variation of descending solar radiation in clear sky in the 10 - 20 band. Note 65.7% for global radiation, 54.4% for cloudiness at 450 hPa, 69.6% for cloudiness between 800 hPa and 450 hPa, 76.6% for low cloudiness, 61.4% for total cloudiness. These results allow us to say that we have generally good sunshine over several months, with little cloud cover in this band. However, since this zone is considered to be part of the main aerosol emission source zones, it is important in their temporal consideration of the optical depth. By doing the wavelet analysis on the optical depth data from Dakar and Banizoumbou, we note that the average dust presence spectrum over the entire period from 1997 to 2019 in the two stations with a slight shift compared to the peaks and the maximum observed value. A sign that there is a strong presence of dust in this area and that it should be taken into account for any photovoltaic installation in this area.

摘要： Gamma radiation is an effective tool for inducing genetic variation in plant characters. In the present experiment, M5 mulberry variety juvenile twigs were subjected to source Co60 gamma irradiation (1 kR - 10 kR) and mutants grown in triplicates in randomized block design to raise M1 and M2 generation. In M2 generation plants were subjected to phytochemical and bioassay tests. Silkworm rearing parameters and commercial characters of cocoons were recorded by feeding cross breed silkworms. Results show that M5 mutant leaves revealed significant variations in phytochemical constituents and moisture content. Bioassay tests recorded significant differences compared to control in M2 generation. Commercial characters like cocoon weight (1.41 g), shell weight (0.24 g), shell percentage (16.29 %), filament length (821.00 mts), renditta (8.2), denier (2.24) and effective rate of rearing (92.14 %) were increased. It is concluded that, gamma rays treatment enhances the mulberry plants leaf bioactive components, silkworm rearing and cocoon parameters and shows beneficial variants in M2 generation.

摘要： BACKGROUND Radiation induces rapid bone loss and enhances bone resorption and adipogenesis, leading to an increased risk of bone fracture. There is still a lack of effective preventive or therapeutic method for irradiation-induced bone injury.Receptor activator of nuclear factor κB ligand(RANKL) provides the crucial signal to induce osteoclast differentiation and plays an important role in bone resorption. However, the mechanisms of radiation-induced osteoporosis are not fully understood.AIM To investigate the role of CR6-interacting factor-1(Crif1) in osteoclastogenesis after radiation and its possible mechanism.METHODS C57 BL/6 mice were exposed to Co-60 gamma rays and received 5 Gy of wholebody sublethal irradiation at a rate of 0.69 Gy/min. For in vitro study, mouse bone marrow mesenchymal stem/stromal cells(BM-MSCs) were irradiated with Co-60 at a single dose of 9 Gy. For osteoclast induction, monocyte-macrophage RAW264.7 cells were cocultured with mouse BM-MSCs for 7 d. Clus Pro and Inter Pro Surf were used to investigate the interaction interface in Crif1 and protein kinase cyclic adenosine monophosphate(c AMP)-activited catalytic subunit alpha complex. Virtual screening using 462608 compounds from the Life Chemicals database around His120 of Crif1 was carried out using the program Autodock_vina. A tetrazolium salt(WST-8) assay was carried out to study the toxicity of compounds to different cells, including human BM-MSCs, mouse BMMSCs, and Vero cells.RESULTS Crif1 expression increased in bone marrow cells after radiation in mice.Overexpression of Crif1 in mouse BM-MSCs and radiation exposure could increase RANKL secretion and promote osteoclastogenesis in vitro. Deletion of Crif1 in BM-MSCs could reduce both adipogenesis and RANKL expression,resulting in the inhibition of osteoclastogenesis. Deletion of Crif1 in RAW264.7 cells did not affect the receptor activator of nuclear factor κB expression or osteoclast differentiation. Following treatment with protein kinase A(PKA)agonist(forskolin) and inhibitor(H-89) in mouse BM-MSCs, Crif1 induced RANKL secretion via the c AMP/PKA pathway. Moreover, we identified the Crif1-protein kinase cyclic adenosine monophosphate-activited catalytic subunit alpha interaction interface by in silico studies and shortlisted interface inhibitors through virtual screening on Crif1. Five compounds dramatically suppressed RANKL secretion and adipogenesis by inhibiting the c AMP/PKA pathway.CONCLUSION Crif1 promotes RANKL expression via the c AMP/PKA pathway, which induces osteoclastogenesis by binding to receptor activator of nuclear factor κB on monocytes-macrophages in the mouse model. These results suggest a role for Crif1 in modulating osteoclastogenesis and provide insights into potential therapeutic strategies targeting the balance between osteogenesis and adipogenesis for radiation-induced bone injury.

摘要： The recombination processes for charge carriers have been studied in n-type silicon crystals which were irradiated by pico-second duration pulse electrons with energy of 3.5 MeV (ultrafast irradiation), and maximum dose of 3.3 × 1013 el/cm2. In-situ measurements were carried out under artificial conditions simulating natural environment (space, semiconductor detectors, etc.). The observed phenomena were investigated experimentally in-situ using a high-speed oscilloscope equipped with a special preamplifier. Following irradiation to particular doses, some peculiarities of the recovery time of the semiconductor equilibrium condition (“characteristic time”), were obtained. Thus, it was found that the value of the “characteristic time” differs by an order of magnitude from the lifetime of the non-equilibrium (minority) charge carrier measured in an ex-situ regime. However, their behavior, as a function of irradiation dose, is similar and decreases with dose increase. Investigations of the dependencies of electro-physical parameters on irradiation dose, using Hall effect measurements, showed that at particular doses the radiation defects thus created, have an insignificant influence on the concentration of the charge carriers, but change their scattering properties appreciably, which affects the time parameters for the recombination of the semiconductor charge carriers. This investigation uses a novel approach to solid-state radiation physics, where in situ measurements were conducted in addition to conventional pre- and post-irradiation.

摘要： The effect of ion implantation, including Ar+ ion with influences (1 × 1013 - 1015 ions/cm2), on the electrical and optical properties of ultrahigh molecular weight polyethylene (UHMWPE) were investigated with particular emphasis placed on the sensor performance to be used in the field of radiation detection. The obtained results focusing on the effect of the different influences showed a significant change in the electrical conductivity, capacitance and loss tangent. The absorption spectra for UHMWPE samples were recorded and the values of the allowed direct and indirect optical energy gap (Eopt)d, (Eopt)in of UHMWPE and energies of the localized states for the virgin and implanted samples were calculated. We found that the optical energy gap values decreased as the radiation dose increased. The results can be explained on the basis of the ion beam radiation-induced damage in the linear chains of UHMWPE, with cross-linking generated after implantation. The observed changes in both the optical and the electrical properties suggest that the UHMWPE film may be considered as an effective material to achieve ion-radiation detection at room temperature.

摘要： Removal of X-ray-induced carbon contamination on beamline optics was studied using radio-frequency plasma with an argon/hydrogen(Ar/H_2) mixture. Experiments demonstrated that the carbon removal rate with Ar/H_2 plasma was higher than that with pure hydrogen or argon. The possible mechanism for this enhanced removal was discussed. The key working parameters for Ar/H_2 plasma removal were determined, including the optimal vacuum pressure, gas mixing ratio, and source power. The optimal process was performed on a carbon-coated multilayer, and the reflectivity was recovered.

摘要： α- and β-chitosan with molecular weight of 190,000 and 800,000 respectively, were depolymerized by e-beam irradiation with various doses. The radiation yield of scission (Gs) and degradation rate of the chitosans were identified. The synergistic chemical degradation in the presence of hydrogen peroxide is more effective at lower doses. Mw of β-chitosan was dramatically decreased from 800,000 to 21,030 at the irradiation dose 5 kGy, on the other hand, that of α-chitosan was decreased much more gradually from 190,000 to 36,000. The values of Gs at 10 kGy in the solution without H2O2 and with H2O2 were respectively 6.09 × 10-5 mol/cal and 30.6 × 10-5 mol/cal for α-Chitosan, and 8.18 × 10-5 mol/cal and 43.8 × 10-5 mol/cal for β-chitosan. It was obviously effective on depolymerization by using the combination of e-beam and H2O2. α-Chitosan molecules are likely to adopt a diffuse conformation in the solution and make the different morphologies depending on the concentration.

摘要： The concept of the recombination of the minority carrier’s recombination velocity at the junction and in the rear, is used for determination, optimum thickness and then shunt resistance in the base of the silicon solar cell, maintained in steady state and under energy from the irradiation flow of charged particles. Resistance shunt is obtained and modeled through a relationship expressed according to the flow and energy of irradiation imposed on the solar cell.

摘要： In this work, we propose a method to determinate the optimum thickness of a monofacial silicon solar cell under irradiation. The expressions of back surface recombination velocity depending the damage coefficient (kl) and irradiation energy (øp) are established. From their plots, base optimum thickness is deduced from the intercept points of the curves. The short-circuit currents Jsc0 and Jsc1 corresponding to the recombination velocity Sb0 and Sb1 are determinated and a correlation between the irradiation energy, the damage coefficient and optimum thickness of the base is established.