annealing

摘要： Improving solar cell performance by increasing solar cell efficiency by various process optimization had always been a simple straight-forward methodology followed in a R&D or in a solar cell manufacturing company. This is also the most cost-effective practice to improve a product performance using the same technology without the need to procure alternative or expensive raw materials or by adopting advanced solar cell processing techniques. Aluminium Back Surface Field (Al-BSF) technology using multi-crystalline wafers (mc-Si) had been a well-established and a dominant product in the solar industry for more than two decades. However, as the industry progresses, the demand for high efficiency solar cells and modules started going up and full area Aluminium BSF based cells suffers from a lot of inherent limitations on cell efficiency. This is primarily due to the intrinsic high density of crystal lattice defects or otherwise called as grain boundary defects present dominantly only in mc-Si wafers. These grain boundaries tends to accumulate several defects and become trap centres which cause high recombination for minority carriers thereby exhibiting lower conversion efficiency and higher dispersion in electrical parameters in batches of tested cells. Years of research using this material have helped to derive the maximum benefits using this mc-Si wafer in producing industrial full area BSF cells and we can say with certainty that the efficiency potential has reached the saturation point with this technology. An interesting development that happened in the area of improving the final product performance using mc-Si wafers at both cell and module level, is by replacing the conventional acid texturing process with an introduction of a nano-texturing process called Metal Catalysed Chemical Etching (MCCE) using specialized chemicals which improves the light trapping capabilities by creation of inverted pyramid texture on the silicon wafer surface and thereby enabling the wafers to absorb sunlight over a broader range of wavelength and incident angle. With this development done in mc-Si wafers in recent past, it is still a daunting task to surpass cell efficiencies beyond 19.0% using this wafer source. Hence for cell manufacturing lines which use mc-Si wafers, there is always a constant need to improve the cell manufacturing processes to reduce the impact of poor intrinsic quality of mc-Si wafers and improve the final product performance without adding any significant cost factor.

摘要： Recently,all-inorganic perovskites have attracted attention due to good thermal stability[1−12].Among them,CsPbI3 has the most desirable optical bandgap(~1.7 eV)for applications in optoelectronic devices[13−16].In general,making black-phase CsPbI3 film requires a high-temperature annealing up to 320°C[17,18],which inevitably raises energy consumption.Though being made at high temperature,the resulting black-phase(αorβphase)CsPbI3 film still suffers from an un-desirable phase transition under ambient conditions[19,20].Sev-eral strategies have been developed to lower the annealing temperature(90-100°C)[20−26],it is still challenging to stabilize black-phase CsPbI3 under ambient condition with high humidity and without a tedious annealing process.Herein,we developed a simple crystal redissolution(CR)strategy to make stable black-phase CsPbI3 film in ambient air with high humidity and without post-annealing.4-N,N-dimethylamino-4ʹ-Nʹ-methyl-stilbazolium tosylate(DAST)can chemically interact with CsPbI3 to reduce the formation energy of black-phase and inhibit CsPbI3 to undergo black-to-yellow phase transition.

摘要： The tri-metal Ti-Al-Nb composites were processed through three procedures:hot pressing,rolling,and hot pressing,followed by subsequent rolling.The fabricated composites were then subjected to annealing at 600,625,and 650°C temperatures at different times.Microstructure observation at the interfaces reveals that the increase in plastic deformation strain significantly affects TiAl_(3) intermetallic layers’evolution and accelerates the layers’growth.On the contrary,the amount of applied strain does not significantly affect the evolution of the NbAl_(3) intermetallic layer thickness.It was also found that Al and Ti atoms’diffusion has occurred throughout the TiAl_(3) layer,but only Al atoms diffuse through the NbAl_(3) layer.The slow growth rate of the NbAl_(3) intermetallic layer is due to the lack of diffusion of Nb atoms and the high activation energy of Al atoms’reaction with Nb atoms.

摘要： The Internet of Things has created an increasing demand for giant magnetoresistive(GMR)sensor owing to its high sensitivity, low power-consumption and small size. A full Wheatstone bridge GMR sensor is fabricated on 6-inch wafers with an annealing process on patterned devices. It can be observed that GMR resistors could have different pinning directions in one wafer by magnetic resistance measurements and MATLAB simulations. The full Wheatstone bridge device shows a sensitivity of 2 mV/V/mT in a linear range of ±6 mT, and its angular response to the surrounding magnetic field is as low as 0.08 mT. These results demonstrate a new approach to high-sensitive and low-cost GMR sensors with a controllable post annealing process.

摘要： The static recrystallization and associated texture evolution were investigated in an extruded Mg-Zn-Gd alloy with bimodal microstructure based on a quasi-in-situ electron back-scatter diffraction(EBSD)method.The typical rare earth(RE)texture formed during annealing,evolving from the bimodal microstructure with[1010]basal fiber texture that consisted of fine recrystallized(RXed)grains and coarse unrecrystallized(un RXed)grains elongated along the extrusion direction.In both RXed and un RXed regions,the RXed nucleation produced randomized orientations without preferred selection and the RXed grains with RE texture orientation had more intensive growth ability than those with basal fiber orientation,thereby leading to the preferred selection of RE texture orientation during grain growth.The relationships between stored strain energy,solute drag,grain growth and texture evolution are discussed in detail.This study provided direct evidence of the RE texture evolution in an extruded Mg-RE alloy,which assists in understanding the formation mechanisms for RE texture during extrusion and better developing wrought Mg alloys with improved formability.

摘要： This study describes the corrosion resistance of extruded,and extruded with post-processing annealing,Mg–7.5 Li–3 Al–1 Zn alloys.The results demonstrate that extrusion at 350°C with an extrusion speed 0.5 s^(-1) does not lead to the full recrystallization of the alloy,and the material still exhibits a dendritic microstructure.The post-processing annealing triggers the microstructure transformation,and the relative composition of the alloy changes.The ratio ofβ(Li)toα(Mg)in the extruded alloy was 29–71%;after annealing amount ofβ(Li)increased,and the ratio ofβ(Li)toα(Mg)in the annealed alloy was 35–65%.Corrosion testing shows that in 3.5 wt%Na Cl the extruded alloys immediately undergo strong dissolution.As a result of the subsequent annealing,an improvement of corrosion resistance is observed.The higher amount ofβ(Li)in the annealed alloy reduces the area ratio of cathodic to anodic sites of corrosion,and this makes the annealed alloy more resistive under the analyzed conditions.

摘要： The original version of this article unfortunately contained a mistake.The affiliation of the authors was incorrect.The correct version is given below:Faculty of Material and Manufacturing Technologies,Malek Ashtar University of Technology,Iran.

摘要： High-quality AlN/sapphire templates were fabricated by the combination of sputtering and high-temperature(HT)annealing.The influence of sputtering parameters including nitrogen flux,radio frequency power,and substrate temperature on the crystalline quality and surface morphology of annealed AlN films were investigated.With lower substrate temperature,lower power,and lower N2 flux,the full width at half maximum of the X-ray rocking curve for AlN(0002)and(102)were improved to 97.2 and 259.2 arcsec after high-temperature annealing.This happens because the increased vacancy concentration of sputtered AlN films can facilitate the annihilation of dislocations by increasing the recovery rate during HT annealing.Step and step-bunching morphologies were clearly observed with optimized sputtering conditions.

摘要： Thermal annealing effects on gamma irradiated Ni/4 H-SiC Schottky barrier diode(SBD) characteristics are analyzed over a wide range of temperatures(400–1100 °C). The annealing induced variations in the concentration of deep level traps in the SBDs are identified by thermally stimulated capacitance(TSCAP). A little decrease in the trap density at E_C – 0.63 eV and E_C –1.13 eV is observed up to the annealing temperature of 600 °C. Whereas, a gamma induced trap at E_C – 0.89 eV disappeared after annealing at 500 °C, revealing that its concentration(< 1013 cm-3) is reduced below the detection limit of the TSCAP technique.The electrical characteristics of irradiated SBDs are considerably changed at each annealing temperature. To understand the anomalous variations in the post-annealing characteristics, the interface state density distribution in the annealed SBDs is extracted.The electrical properties are improved at 400 °C due to the reduction in the interface trap density. However, from 500 °C, the electrical parameters are found to degrade with the annealing temperature because of the increase in the interface trap density.From the results, it is noted that the rectifying nature of the SBDs vanishes at or above 800 °C.

摘要： The paper searched for raw data about wild-caught fish, where a sigmoidal growth function described the mass growth significantly better than non-sigmoidal functions. Specifically, von Bertalanffy’s sigmoidal growth function (metabolic exponent-pair a = 2/3, b = 1) was compared with unbounded linear growth and with bounded exponential growth using the Akaike information criterion. Thereby the maximum likelihood fits were compared, assuming a lognormal distribution of mass (i.e. a higher variance for heavier animals). Starting from 70+ size-at-age data, the paper focused on 15 data coming from large datasets. Of them, six data with 400 - 20,000 data-points were suitable for sigmoidal growth modeling. For these, a custom-made optimization tool identified the best fitting growth function from the general von Bertalanffy-Pütter class of models. This class generalizes the well-known models of Verhulst (logistic growth), Gompertz and von Bertalanffy. Whereas the best-fitting models varied widely, their exponent-pairs displayed a remarkable pattern, as their difference was close to 1/3 (example: von Bertalanffy exponent-pair). This defined a new class of models, for which the paper provided a biological motivation that relates growth to food consumption.