场效应器件
场效应器件的相关文献在1972年到2022年内共计200篇,主要集中在无线电电子学、电信技术、自动化技术、计算机技术、电工技术
等领域,其中期刊论文86篇、会议论文30篇、专利文献204419篇;相关期刊43种,包括电源技术、变频器世界、电子学报等;
相关会议17种,包括2014`全国半导体器件产业发展、创新产品和新技术研讨会暨第七届中国微纳电子技术交流与学术研讨会、2013‘全国半导体器件技术、产业发展研讨会暨第六届中国微纳电子技术交流与学术研讨会、第七届仪表、自动化与先进集成技术大会暨第六届测控技术与仪器仪表学术大会等;场效应器件的相关文献由404位作者贡献,包括武世香、肖德元、何进等。
场效应器件—发文量
专利文献>
论文:204419篇
占比:99.94%
总计:204535篇
场效应器件
-研究学者
- 武世香
- 肖德元
- 何进
- 王贵华
- 张汝京
- 杜鸣
- 毛维
- 郝跃
- 刘晓宇
- 堀田幸司
- 张爱喜
- 杉山隆英
- 杜彩霞
- 梁世军
- 梁世博
- 河路佐智子
- 潘晨
- 王浩敏
- 石朋毫
- 缪峰
- 臼井正则
- 谢晓明
- 谢红
- S·F·卡格
- T.E.哈林顿
- 张进成
- 杨银堂
- 梅金河
- 王鹏飞
- C·F·耶普
- H·E·里埃尔
- J·J·徐
- J·O·楚
- J·克诺赫
- J·本特纳
- K·T·小塞特尔迈耶尔
- M·T·比约克
- M·巴达罗格鲁
- P·M·所罗门
- R.K-c.杨
- S·S·宋
- V·马赫卡奥特桑
- W·H·里斯
- 丁辛芳
- 于广辉
- 余山
- 侯洵
- 刘宗贺
- 刘洪刚
- 刘莉
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吴义良;
周国方;
王文坚;
张梓晗;
吴春艳
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摘要:
Tetragonal CuInS2 flower-like microspheres were successfully synthesized through the sol-vothermal reaction in ethylene glycol (EG) with the assistance of cationic surfactant cetyltrimethyl-ammonium bromide ( CTAB). The morphology, structure and composition of the products were characterized by X-ray diffraction ( XRD) , scanning electron microscope ( SEM ) , photoelectron spectroscopy (XPS) and UV-Vis spectroscopy, respectively. XRD spectra showed that the lowest temperature for the synthesis of pure CuInS2 was 200 °C. CuInS2 microspheres obtained at the temperature 200 °C and 220 °C were verified to be Cu-rich and In-rich, respectively. UV-Vis spectrum showed that there existed intensity absorption in the visible region for CuInS2 microspheres obtained at 200°C. The band gap was estimated to be ~ 1. 62 eV, which is very close to that of bulk CuInS2. Back-gate field effect transistor based on CuInS2 microspheres obtained at 200 °C was constructed and their electrical characterizations indicated that as-prepared CuInS2 microspheres were p-type semiconductor with conductivity of ~ 2 S·cm-1 , which is similar to that of p-type CuInS2 films. As-prepared CuInS2 microspheres showed their potential application in the fields of low-cost and high-performance photovoltaic devices.%以十六烷基三甲基溴化铵(CTAB)为表面活性剂,在乙二醇(EG)中进行溶剂热反应,成功合成了四方晶系CuInS2花状微球.利用扫描电子显微镜(SEM)、X射线衍射(XRD)、光电子能谱(XPS)以及紫外-可见吸收光谱等表征其形貌、结构及成分,并构建了基于其的底栅型场效应器件(Back-gate FET).实验结果表明:p型CuInS2微球所需合成温度为200°C,禁带宽度为1.62 eV,电导率约为2 S·cm-1.CuInS2微球有望用于低耗、高效CuInS2基光伏器件的制备.
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宗小林;
吴春生;
王丽江;
王平
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摘要:
对比甲醇-盐酸混合物及硫酸处理对场效应器件(Field-effect device,FED)电化学测试性能的影响.实验结果表明,FED表面经过两种方式处理,其电化学阻抗测试特性发生变化,表现在阻抗的虚部值(用Zq表示)随加在FED器件与参比电极之间的电压的变化特性(用Zq-V曲线表示)发生改变.经过硫酸处理的器件的Zq-V曲线相对于未处理器件有微小偏移;而甲醇-盐酸体系处理后曲线在耗尽层区的斜率有所下降,表明这种处理对器件测试性能有负向的影响.经硅烷化固定在表面的氨基采用荧光标记,荧光测试结果表明,两种表面处理方式对硅烷化效果影响不大.进一步通过共价连接在硅烷化FED表面引入探针DNA分子,制备基于FED的DNA传感器.与目标DNA分子杂交反应后,实验表明,硫酸处理的测试结果要好于甲醇-盐酸的处理方法.
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ZHOU Jian-lin ZHANG Fu-jia
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摘要:
A top contact n-type organic field-effect transistor with low operating voltage was fabricated by employing Ta2O5/PMMA as the double insulators and PTCDI-C12 as the semiconductor active layer. The Ta2O5 layer was prepared by using simple economical anodization technique and the PMMA layer was prepared by using the spin-coating method. Compared with the OFET with single Ta2O5 insulator,the device with double insulators shows obviously better electrical performance. It has a field effect electron mobility of 0.063 cm2/Vs,an on/off ratio of 1.7×104 and a threshold voltage of 2.3 V.
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摘要:
THE RELIABILITY of adjustables peed ac motor drives is an area of great interest for all members of the drives community and marketplace. This is particularly the case for the military, aerospace and automotive industries that are increasingly adopting variable speed drives in order to improve overall system efficiency and performance. There are certain safety critical applications such as steering, fuel pumps,
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摘要:
A similar circuit as Fig. 12 can be realized with MOSFET or IGBT devices configured as bi-directional pairs in the output bridge. In this case, the complete process in Fig. 8 would be needed to generate the complete 50% gate drive pulses. The 50% gate pulses still support pulse transformer coupling, retaining the simplicity of the gate drive isolation. The PWM cycloconverter process scales directly to higher switching speeds possible with these devices.
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- 南京特佰瑞电子科技有限公司
- 公开公告日期:2022-11-22
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摘要:
本发明提出了一种碳化硅场效应器件开启电压时移监控方法与系统,为待测件阵列板提供栅偏电压的电压源、检测待测件阵列板栅偏电压的电压检测模块;与电压源、电压检测模块和待测件阵列板相连并控制其开关的高速电子开关;控制高速电子开关对待测件栅偏电压的开关的时序及逻辑控制模块;由于栅氧介质层和碳化硅体材料之间存在电子陷阱,正向电压施加到栅极上会使得电子被电子陷阱俘获,导致开启电压的正向时移,本方案选取正向扫描与负向扫描两种方式,在不同模式下表征碳化硅场效应器件的开启电压;通过栅偏电压与开启电压测试模块之间的快速切换,实现了碳化硅场效应器件开启电压的原位测试,防止开启电压在实验后发生恢复,造成测试值的误差。