quantum dot

摘要： Antibiotics are a category of chemical compounds used to treat bacterial infections and are widely applied in cultivation,animal husbandry,aquaculture,and pharmacy.Currently,residual antibiotics and their metabolites pose a potential risk of allergic reactions,bacterial resistance,and increased cancer incidence.Residual antibiotics and the resulting bacterial antibiotic resistance have been recognized as a global challenge that has attracted increasing attention.Therefore,monitoring antibiotics is a critical way to limit the ecological risks from antibiotic pollution.Accordingly,it is desirable to devise new analytical platforms to achieve efficient antibiotic detection with excellent sensitivity and specificity.Quantum dots(QDs)are regarded as an ideal material for use in the development of antibiotic detection biosensors.In this review,we characterize different types of QDs,such as silicon,chalcogenide,carbon,and other doped QDs,and summarize the trends in QD-based antibiotic detection.QD-based sensing applications are classified according to their recognition strategies,including molecularly imprinted polymers(MIPs),aptamers,and immunosensors.We discuss the advantages of QD-derived antibiotic sensors,including low cost,good sensitivity,excellent stability,and fast response,and illustrate the current challenges in this field.

摘要： Artificial neural networks(ANNs)are attracting attention for their high performance in various fields,because increasing the network size improves its functioning.Since large-scale neural networks are difficult to implement on custom hardware,a two-dimensional(2D)structure is applied to an ANN in the form of a crossbar.We demonstrate a synapse crossbar device from recent research by applying a memristive system to neuromorphic chips.The system is designed using two-dimensional structures,graphene quantum dots(GQDs)and graphene oxide(GO).Raman spectrum analysis results indicate a D-band of 1421 cm^(−1) that occurs in the disorder;band is expressed as an atomic characteristic of carbon in the sp2 hybridized structure.There is also a G-band of 1518 cm^(−1) that corresponds to the graphite structure.The G bands measured for RGO-GQDs present significant GQD edge-dependent shifts with position.To avoid an abruptly-formed conduction path,effect of barrier layer on graphene/ITO interface was investigated.We confirmed the variation in the nanostructure in the RGO-GQD layers by analyzing them using HR-TEM.After applying a negative bias to the electrode,a crystalline RGO-GQD region formed,which a conductive path.Especially,a synaptic array for a neuromorphic chip with GQDs applied was demonstrated using a crossbar array.

摘要： The energy level separation between the edge states in topological insulator quantum dots lies in the terahertz(THz) range.Quantum confinement ensures the nonuniformity of the energy level separation near the Dirac point. Based on these features, we propose that a topological insulator quantum dot array can be operated as an electrically pumped continuous-wave THz laser. The proposed device can operate at room temperature, with power exceeding 10 mW and quantum efficiency reaching ~50%. This study may promote the usage of topological insulator quantum dots as an important source of THz radiation.

摘要： Semiconductor quantum dots are leading candidates for the on-demand generation of single photons and entangled photon pairs.High photon quality and indistinguishability of photons from different sources are critical for quantum information applications.The inability to grow perfectly identical quantum dots with ideal optical properties necessitates the application of post-growth tuning techniques via e.g.temperature,electric,magnetic or strain fields.In this review,we summarize the state-of-the-art and highlight the advantages of strain tunable non-classical photon sources based on epitaxial quantum dots.Using piezoelectric crystals like PMN-PT,the wavelength of single photons and entangled photon pairs emitted by InGaAs/GaAs quantum dots can be tuned reversibly.Combining with quantum light-emitting diodes simultaneously allows for electrical triggering and the tuning of wavelength or exciton fine structure.Emission from light hole exciton can be tuned,and quantum dot containing nanostructure such as nanowires have been piezo-integrated.To ensure the indistinguishability of photons from distant emitters,the wavelength drift caused by piezo creep can be compensated by frequency feedback,which is verified by two-photon interference with photons from two stabilized sources.Therefore,strain tuning proves to be a flexible and reliable tool for the development of scalable quantum dots-based non-classical photon sources.

摘要： Since discrete multilevel transitions of quantum-dot molecules driven by external electromagnetic fields can exhibit quantum coherence effects, such an optical characteristic can be utilized to control propagation of electromagnetic wave through a quantum-dot molecule dielectric film. Since inner-dot tunneling in quantum-dot molecules can be controlled by a gate voltage, destructive quantum coherence among multilevel transitions in quantum-dot molecule would give rise to EIT (electromagnetically induced transparency). In this report, we shall investigate controllable on- and off-resonance tunneling effects of an incident electromagnetic wave through such a quan-tum-dot-molecule dielectric film, of which the optical response is tuned by the switchable gate voltage. We have found from the theoretical mechanism that a high gate voltage can cause the EIT phenomenon of quan-tum-dot-molecule systems, and under the condition of on-resonance light tunneling through the thin film, the probe field will propagation without loss if the probe frequency detuning is zero. By taking advantage of these effects sensitive to the tunable gate voltage, such quantum coherence would be inte-grated in certain photonic structures, and some devices such as photonic switching and transistors can be designed. Transient evolution of optical characteristics in the quantum-dot-molecule dielectric film (once the tunable gate voltage is turned on or off) is also considered in this report.

摘要： Aqueous colloidal dispersions containing Znx Cd1‐x S quantum dots (QDs) of different x compositions were prepared by precipitating zinc and cadmium acetates with sodium sulphide,in the presence of a cetyltrimethylammonium bromide stabilizer.Ultraviolet‐visible absorption spectroscopy was used to determine the transition energies of the QDs,which in turn were used to calculate their sizes,which depended on their composition.The QD size decreased with increasing Zn content.The photocatalytic activity of the Znx Cd1‐x S QDs was studied by the decomposition of methylene blue under ultraviolet irradiation,at a maximum intensity at 365 nm (3.4 e V).Three different photo‐catalytic activity regions were observed,which depended on the Zn content.The quantum levels of the QDs could be excited by incident irradiation,and influenced the resulting photocatalytic activity.Maximum photocatalytic activity was achieved at x = 0.6,where the QD transition energy was equal to the irradiation photon energy.The photocatalytic efficiency of the QDs depended on their surface area and arrangement of quantum levels,because of the quantum size effect.

摘要： Quantum-dot cellular automaton (QCA) is a novel nanotechnology that provides a very different computation platform than traditional CMOS, in which polarization of electrons indicates the digital information. This paper demonstrates designing combinational circuits based on quantum-dot cellular automata (QCA) nanotechnology, which offers a way to implement logic and all interconnections with only one homogeneous layer of cells. In this paper, the authors have proposed a novel design of XOR gate. This model proves designing capabilities of combinational circuits that are compatible with QCA gates within nano-scale. Novel adder circuits such as half adders, full adders, which avoid the fore, mentioned noise paths, crossovers by careful clocking organization, have been proposed. Experiment results show that the performance of proposed designs is more efficient than conventional designs. The modular layouts are verified with the freely available QCA Designer tool.

摘要： A state space model(SSM) is derived for quantum-dot semiconductor optical amplifiers(QD-SOAs).Rate equations of QD-SOA are formulated in the form of state update equations,where average occupation probabilities along QD-SOA cavity are considered as state variables of the system.Simulations show that SSM calculates QD-SOA′s static and dynamic characteristics with high accuracy.

摘要： The authors present an analysis of the fault tolerant properties and the effects of temperature on an exclusive OR (XOR) gate and a full adder device implemented using quantum-dot cellular automata (QCA) structures. A Hubbard-type Hamiltonian and the Inter-cellular Hartree approximation have been used for modeling, and a uniform random distribution has been implemented for the simulated dot displacements within cells. We have shown characteristic features of all four possible input configurations for the XOR device. The device performance degrades significantly as the magnitude of defects and the temperature increase. Our results show that the fault-tolerant characteristics of an XOR device are highly dependent on the input configurations. The input signal that travels through the wire crossing (also called a crossover) in the central part of the device weakens the signal significantly. The presence of multiple wire crossings in the full adder design has a major impact on the functionality of the device. Even at absolute zero temperature, the effect of the dot displacement defect is very significant. We have observed that the breakdown characteristic is much more pronounced in the full adder than in any other devices under investigation.