HFO2-BASED FERROELECTRIC CAPACITOR AND PREPARATION METHOD THEREFOR, AND HFO2-BASED FERROELECTRIC MEMORY

摘要

An HfO2-based ferroelectric capacitor and a preparation method therefor, and an HfO2-based ferroelectric memory, relating to the technical field of microelectronics. The purpose of enlarging a storage window of the ferroelectric memory is achieved by inserting an Al2O3 intercalation layer having a coefficient of thermal expansion smaller than TiN between a dielectric layer and an upper electrode (TiN) of the ferroelectric capacitor. The HfO2-based ferroelectric capacitor comprises a substrate layer (1), a lower electrode (2), a dielectric layer (3), an Al2O3 intercalation layer (4), an upper electrode (5) and a metal protection layer (6) from bottom to top. The size of the storage window can be increased, information misreading is effectively prevented, and therefore, the reliability of the memory is improved.