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CARBON QUANTUM DOT AND SYNTHESIS METHOD THEREFOR, THIN FILM AND ELECTRONIC DEVICE

机译:碳量子点和合成方法,薄膜和电子装置

摘要

Provided are a carbon quantum dot, a synthesis method therefor, a thin film and an electronic device, the carbon quantum dot containing a structure represented by formula (2). In formula (2), L is a group represented by formula (1): in formula (1), R1, R2, R4, R5, R7 and R8 are each independently selected from a group consisting of the following groups: hydrogen, alkyl, amino, carboxyl, hydroxyl, nitryl, sulfonyl, cycloalkyl, heteroalkyl, aralkyl, alkoxy, aryloxy, haloalkyl, haloalkoxy, phosphino, and combinations thereof; R3, R6 and R9 are each independently selected from a group consisting of the following groups: substituted or unsubstituted hydroxyl, amino, ethylamino, diethylamino, benzoate, hydroxybenzoate and ethyl benzoate. The carbon quantum dot provided is high in fluorescence quantum yield, good in stability and narrow in half-peak width, and may be used in films and electronic devices.
机译:提供是碳量子点,其合成方法,薄膜和电子装置,含有由式(2)表示的结构的碳量子点。 在式(2)中,L是由式(1)表示的基团:在式(1)中,R 1,R 2,R 4,R 5,R7和R 2各自独立地选自以下基团:氢,烷基 ,氨基,羧基,羟基,镍氢,磺酰基,环烷基,杂烷基,芳烷基,烷氧基,芳氧基,卤代烷基,卤代烷氧基,磷酸酯及其组合; R 3,R6和R9各自独立地选自以下基团:取代或未取代的羟基,氨基,乙基氨基,二乙基氨基,苯甲酸酯,羟基苯甲酸酯和苯甲酸乙酯。 提供的碳量子点在荧光量子产率高,稳定性良好并且半峰宽度窄,并且可以用于薄膜和电子设备。

著录项

  • 公开/公告号WO2021248830A1

    专利类型

  • 公开/公告日2021-12-16

    原文格式PDF

  • 申请/专利权人 SUZHOU XINGSHUO NANOTECH CO. LTD.;

    申请/专利号WO2020CN129835

  • 发明设计人 WANG YUNJUN;ZHAI WEI;LIU DONGQIANG;

    申请日2020-11-18

  • 分类号C09K11/02;C09K11/06;C09K11/65;H01L51/54;H01L51/50;

  • 国家 CN

  • 入库时间 2022-08-24 22:54:12

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