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WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, AND WAFER AND EPITAXIAL WAFER MANUFACTURED THEREBY

机译:晶片制造方法,外延晶片制造方法和晶片和外延晶片由此制造

摘要

A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer 10 and epitaxial wafer 20 manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer 10 with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer 20 manufacturing method enables the manufacture of an epitaxial wafer 20 that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.
机译:提供了一种晶片制造方法,外延晶片制造方法和由此制造的晶片10和外延晶片20。 晶片制造方法使得能够制造具有低密度的微皮带缺陷和最小数量的颗粒和划痕的晶片10。 外延晶片20制造方法使得制造具有低密度的外延晶片20,诸如垮台,三角形和胡萝卜缺陷的低密度,具有优异的装置特性,并且提高了装置的产量。

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