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Method for controlling convection pattern of silicon melt and method for producing monocrystalline silicon

机译:控制硅熔体对流模式的方法及生产单晶硅的方法

摘要

A method of controlling a convection pattern of a silicon melt includes: acquiring a temperature at a first measurement point not overlapping a rotation center of a quartz crucible on a surface of the silicon melt, the quartz crucible rotating in a magnetic-field-free state; determining that the temperature at the first measurement point periodically changes; and fixing a direction of a convection flow to a single direction in a plane orthogonal with an application direction of a horizontal magnetic field in the silicon melt by starting a drive of a magnetic-field applying portion to apply the horizontal magnetic field to the silicon melt when a temperature change at the first measurement point reaches a predetermined state, and subsequently raising the intensity to 0.2 tesla or more.
机译:一种控制硅熔体的对流图案的方法包括:在硅熔体表面上的第一个测量点处获取不重叠石英坩埚的旋转中心的温度,石英坩埚在无磁场状态下旋转 ; 确定第一个测量点的温度周期性地改变; 并将对流流的方向与硅熔体中的水平磁场的施加方向正交,通过启动磁场施加部分的驱动以将水平磁场施加到硅熔体的平面上,以将流动方向垂直于硅熔体的施加方向。 当第一测量点处的温度变化达到预定状态时,随后将强度升高到0.2特斯拉或更多。

著录项

  • 公开/公告号US11186921B2

    专利类型

  • 公开/公告日2021-11-30

    原文格式PDF

  • 申请/专利权人 SUMCO CORPORATION;

    申请/专利号US201916975884

  • 发明设计人 RYUSUKE YOKOYAMA;WATARU SUGIMURA;

    申请日2019-02-27

  • 分类号C30B15/20;C30B29/06;C30B30/04;

  • 国家 US

  • 入库时间 2022-08-24 22:15:50

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