Manufacturing method of ultraviolet laser diode and ultraviolet laser diode

摘要

Problem to be solved: to provide a method of manufacturing an ultraviolet laser diode having a low oscillation threshold current density.On the substrateFirst cladding layerLuminescent layerSecond cladding layerAndA step of forming a laminate forming a nitride semiconductor stack (step S101) andAt least a portion of the nitride semiconductor stack is etchedForm a mesa structureThe ratio of the length of the resonator end surface to the length of the side surface of the mesa structure in plane viewA mesa structure forming step with a ratio of 1:5 or more to 1:500 or less (step S102);On part of the first areaA first conductive material is disposed andA first electrode forming step (step S103) for heat treatment at 400.degree. C. or moreAn area on the second cladding layer;Distance to side μ In areas greater than or equal toA second electrode forming step (step S104) to place the second conductive material.Diagram