OVERCURRENT PROTECTION CIRCUIT OF GALLIUM NITRIDE POWER DEVICE AND METHOD FOR IMPROVING RESPONSE SPEED

摘要

The present invention relates to an overcurrent protection circuit of a gallium nitride power device and a method for improving a response speed. The overcurrent protection circuit based on an integrated gallium nitride power device comprises a monitoring circuit, a shielding signal generation circuit and a logical control module. The monitoring circuit is electrically connected to the shielding signal generation circuit and a gate driver by means of the logical control module, respectively. The gate driver is electrically connected to a high-electron-mobility power transistor, and the high-electron-mobility power transistor is sequentially connected to the monitoring circuit and a load.