A method of healing an implanted layer comprising a heat treatment prior to recrystallization by laser annealing

摘要

The invention relates to a method of healing defects associated with implantation of species carried out in a donor substrate (1) made of a semiconductor material to form therein an embrittlement plane (5) separating a thin layer (4) d. a massive part of the donor substrate. The process involves surface amorphization of the thin film, followed by the application of heat treatment to the superficially amorphous thin film. The method comprises, after the heat treatment, applying laser annealing to the superficially amorphized thin film to recrystallize it in the solid phase. Figure for the abstract: figure 1