The invention relates to a method of manufacturing a structured substrate (10) provided with an entrapment layer (30 ') on which rests a stack formed of an insulating layer (30) and a layer of monocrystalline material ( 40), the method comprising the following steps: a) a step of forming an amorphous silicon layer which on a front face (21) of a silicon substrate (20), b) a heat treatment step intended to converting the amorphous silicon layer (25) into a trapping layer (30 ') formed of monocrystalline silicon grains, the heat treatment conditions in terms of time and temperature being adjusted to limit the grains to a size less than 200 nm , c) a step of forming a stack covering the trapping layer (30 '), and formed of an insulating layer (30) and a layer of monocrystalline material (40). Figure for the abstract: Figure 4.
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