A method for forming a patterned 2D material is disclosed. The method comprises providing a multilayer 2D material comprising at least two layers of the 2D material, and pre-patterning the multilayer 2D material by using a lithographic patterning method followed by a first etching process in order to form a pre-patterned structure in the multilayer 2D material. Further, the method comprises applying a second etching process on the pre-patterned structure such that a first shape of at least one portion of the patterned structure is transformed into a second shape thereby forming a patterned multilayer 2D material sample, wherein the second etching process is an anisotropic etching process.
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