A magnetic Josephson junction memory cell (100) is provided that comprises a stack including a magnetic reference layer (112) and a magnetic storage layer (108) disposed between first and second superconductor electrodes (102, 120). The memory cell further comprises a magnetically stabilizing structure (114) disposed between the stack and the second superconductor electrode, magnetically coupling with the magnetic reference layer to strengthen the fixed state thereof, for example, an antiferromagnetic layer (116) surrounding an extension plug (124) of the electrode.
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