Compound, resin, method for forming lower layer film for lithography, composition for forming lower layer film for lithography, lower layer film for lithography and resist pattern forming method, circuit pattern forming method, and purification method

摘要

A compound or a resin represented by the following formula (1). (in formula (1), each X independently represents an oxygen atom, a sulfur atom, or an uncrosslinked state, each R 1 is independently selected from the group consisting of a halogen group, a cyano group, a nitro group, an amino group, a hydroxyl group, a thiol group, a heterocyclic group, an alkyl group having 1 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an aryl group having 6 to 40 carbon atoms, and combinations thereof, in which the alkyl group, the alkenyl group and the aryl group optionally include an ether bond, a ketone bond or an ester bond, each R 2 independently represents an alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 40 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, a thiol group or a hydroxyl group, in which at least one R 2 represents a group including a hydroxyl group or a thiol group, each m is independently an integer of 0 to 7 (in which at least one m is an integer of 1 to 7.), each p is independently 0 or 1, q is an integer of 0 to 2, and n is 1 or 2.)