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Interconnection structure of integrated circuits

机译:集成电路互连结构

摘要

Interconnection structure of integrated circuitsThe specification relates to a process including the following steps: providing an integrated circuit (1), including: a first stack (5), an integrated circuit (1), and,A second (7) and a third (9) insulating layer;A contact (11) passing through the first layer (5);And a member (13) including an electrical contact area (15) in the second layer (7);The opening (35) is etched in the third layer (9),Flatness (15) of the contact area;A fourth insulating layer (37) is applied on the opening (35);Etching another opening (43) to the contact area (15) through an opening (35) in the third insulating layer (9);Another opening is filled with metal (45) to form a metal horizontal plane.Abstract figure: Figure 7
机译:集成电路互连结构该规范涉及包括以下步骤的过程:提供集成电路(1),包括:第一堆叠(5),集成电路(1),以及第二(7)和第三(9)绝缘层;穿过第一层(5)的接触(11);和包括第二层(7)中的电接触区域(15)的构件(13);在第三层中蚀刻开口(35)(9 ),接触面积的平坦度(15);在开口(35)上施加第四绝缘层(37);通过第三绝缘中的开口(35)蚀刻到接触区域(15)的另一个开口(43)层(9);另一个开口填充有金属(45)以形成金属水平平面。抽象图:图7

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