Inductively coupled plasma etching apparatus and plasma generation mechanism

摘要

Problem to be solved: to provide an inductively coupled plasma etching apparatus capable of maintaining the plasma in a more stable state.Solution: in this inductively coupled plasma etching apparatus 1, at least a portion of a dielectric portion 7 having a cylindrical shape and a side surface (outer peripheral surface 7a) of a dielectric part 7 are wound around the air side forming a plasma generating space SP1 inside the vacuum chamber A plasma generating mechanism 4 including a silicon portion 41 for plasma etching of the etching gas supplied to the plasma generating space Sp1 is provided.A groove 71 is provided on the vacuum side surface (inner peripheral surface 7b) of the dielectric portion 7.In the cross-sectional view of the groove 71, at least a portion of the inner side surface 71A opposed to each other of the groove 71 is formed so as to be recessed in the width direction of the groove 71 than the opening 71B of the groove 71.Diagram