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Control device

机译:控制设备

摘要

Problem to be solved: to provide a control device capable of preventing a failure in a semiconductor switching element.Control unit 10 isA closed state in which current is supplied to heater 20 andAn open state where no current is supplied andA voltage driven semiconductor switching element 300 for switching betweenSwitch between closed and open statesA gate drive circuit 500 for changing the gate voltage of a semiconductor switching deviceA control unit 120 for controlling the operation of gate drive circuitA temperature acquisition section 110 for obtaining the temperature of the semiconductor switching element.When the temperature of the semiconductor switching element 300 acquired by the temperature acquisition section 110 exceeds a predetermined upper limit temperature, the control section 120 performs the heat generation suppressing processing, which is a process for shortening the time required for switching between the closed state and the open state to be shorter than before.Diagram
机译:要解决的问题:提供一种能够防止半导体开关元件的失败的控制装置。控制单元10 ISA闭合状态,其中电流被提供给加热器20和an的打开状态,其中没有电流被提供电流驱动的半导体开关元件300,用于在闭合和开放状态驱动电路500之间切换以改变半导体切换的栅极电压之间的开关。 DeviceA控制单元120用于控制栅极驱动电路温度采集部分110的操作,用于获得半导体开关元件的温度。当由温度采集部分110获取的半导体开关元件300的温度超过预定的上限温度时,控制部分120执行热产生抑制处理,这是缩短缩短在关闭状态和打开状态之间切换所需时间的过程,以缩短比之前.diagram

著录项

  • 公开/公告号JP2021090105A

    专利类型

  • 公开/公告日2021-06-10

    原文格式PDF

  • 申请/专利权人 株式会社デンソー;

    申请/专利号JP20190218289

  • 发明设计人 森田 尚治;

    申请日2019-12-02

  • 分类号H03K17/08;H03K17/567;

  • 国家 JP

  • 入库时间 2022-08-24 19:09:03

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