A SiC substrate contains tantalum or niobium of which the content is equal to or more than 3×1014 cm−3 and equal to or less than 1×1015 cm−3, and nitrogen of which the content is equal to or more than 1×1016 cm −3 and equal to or less than 1×1020 cm−3.
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机译：SiC衬底含有钽或铌，其中含量等于或大于3×10 14 cm -3 等于或小于1×10 15 cm -3 ，其含量等于或大于1×10 16 cm -3和-3等于或小于1×10 20 cm -3 。
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