Method for growing SiC single crystal, SiC single crystal growth apparatus and SiC single crystal ingot

摘要

PROBLEM TO BE SOLVED: To provide a SiC single crystal growing method and growing apparatus capable of preventing a defect occurrence due to the fact that a gas atmosphere at an initial stage of a crystal growth is not stable.;SOLUTION: In a SiC single crystal growing apparatus growing apparatus, a heat transfer is suppressed by a non-contact state, in which a heat transfer portion 3 containing a heat transfer substance and a back face Sb on the side opposed to a crystal growing face Sa of a single crystal S do not contact, and a portion of the crystal growing face Sa of the single crystal S are sublimated, i.e., etched to eliminate the defect which occurs at the initial stage of the crystal growth. After the etching, a heat transfer portion 3 is slid toward the single crystal S thereby to the back face Sb of the single crystal S and the heat transfer portion 3 into contact. The single crystal S is cooled to such an extent that a material gas g can be re-crystalized to grow the single crystal crystally.;SELECTED DRAWING: Figure 2;COPYRIGHT: (C)2018,JPO&INPIT