首页> 外国专利> A substrate having a magnetic material thin film layer including a paramagnetic material between spaced ferromagnetic grain boundaries and a method of manufacturing the same

A substrate having a magnetic material thin film layer including a paramagnetic material between spaced ferromagnetic grain boundaries and a method of manufacturing the same

机译:具有磁性材料薄膜层的基板,该薄膜层包括间隔的铁磁性晶界和制造方法之间的顺磁性材料

摘要

The present invention relates to a substrate on which a magnetic material thin film layer including a paramagnetic material is formed between spaced ferromagnetic grain boundaries, and a method of manufacturing the same. More specifically, the present invention is a substrate on which a metal oxide buffer layer is formed; And a magnetic material thin film layer formed on the buffer layer, wherein the magnetic material thin film layer is formed by depositing a ferromagnetic material on the buffer layer, and the metal hydroxide generated in the metal oxide buffer layer is removed to determine the ferromagnetic material. Comprising a ferromagnetic layer in which grain boundaries are formed to be spaced apart from each other, and a paramagnetic layer in which a paramagnetic material is deposited on top of the ferromagnetic layer and diffusely penetrated between the grain boundaries of the ferromagnetic layer formed to be spaced apart Disclosed is a substrate in which a magnetic material thin film layer including a paramagnetic material is formed between grain boundaries.
机译:本发明涉及一种基板,在其上形成包括顺磁性晶状体边界之间的磁性材料薄膜层,以及制造该基板,以及制造该基板。更具体地,本发明是其中形成金属氧化物缓冲层的基材;和在缓冲层上形成的磁性材料薄膜层,其中通过在缓冲层上沉积铁磁性材料形成磁性材料薄膜层,并除去金属氧化物缓冲层中产生的金属氢氧化物以确定铁磁性材料。包括一种铁磁层,其中形成晶界以彼此间隔开,并且顺磁层在铁磁层的顶部上沉积顺磁性层,并且在形成为间隔的铁磁层的晶界之间漫射渗透仅公开了一种基材,其中在晶界之间形成包括顺磁性材料的磁性材料薄膜层。

著录项

  • 公开/公告号KR20210055503A

    专利类型

  • 公开/公告日2021-05-17

    原文格式PDF

  • 申请/专利权人 한국전기연구원;

    申请/专利号KR1020190142036

  • 发明设计人 김호섭;오상수;조정현;

    申请日2019-11-07

  • 分类号H01L43/08;H01L21/02;H01L21/324;H01L43/10;H01L43/12;

  • 国家 KR

  • 入库时间 2022-08-24 18:57:43

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