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LDMOS transistor with gate structure having alternating regions of wider and narrower spacing to a body region
LDMOS transistor with gate structure having alternating regions of wider and narrower spacing to a body region
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机译:具有栅极结构的LDMOS晶体管,具有更宽的交替区域和较窄间隔的区域区域
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摘要
A power transistor is provided with at least one transistor finger that lies within a semiconductor material. The gate oxide is segmented into a set of segments with thick field oxide between each segment in order to reduce gate capacitance and thereby improve a resistance times gate charge figure of merit.
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