Method for grouping region of interest of mask pattern and measuring critical dimension of mask pattern using the same

摘要

A method of grouping a region of interest for measuring a mask pattern and a method of measuring a line width of a mask pattern using the same are provided. In the method of measuring the line width of the mask pattern, a mask pattern according to an optical proximity correction (OPC) mask design including at least one block is generated, and in the mask pattern, the same critical dimension (CD) is obtained. Measures a first line width of a target-region of interest (target-ROI) including blocks adjacent to each other, and includes the target measurement region of interest and at least one neighboring block adjacent to the target measurement region of interest And designating a region of interest for measuring a group, measuring second line widths of neighboring blocks of the region of interest for measuring the group, and correcting a measured value of the first line width using the measured values of the second line widths.