procedure for limitation of legeringsfladen by alloy of elektrodemateriale on semiconducting crystals.

• 1. 有机晶体管、化合物、非发光性有机半导体器件用有机半导体材料、有机晶体管用材料、非发光性有机半导体器件用涂布液、有机晶体管的制造方法、有机半导体膜的制造方法、非发光性有机半导体器件用有机半导体膜、有机半导体材料的合成方法 [P] . 中国专利： CN106104833A . 2016-11-09
• 2. 非发光性有机半导体器件用涂布液、有机晶体管、化合物、非发光性有机半导体器件用有机半导体材料、有机晶体管用材料、有机晶体管的制造方法和有机半导体膜的制造方法 [P] . 中国专利： CN106165105A . 2016-11-23
• 3. procedure for the manufacture of semiconducting elektrodesystemer, where one or more contacts is placed in a semiconducting body by alloy and then supplied with tilførselsledere. [P] . DK90686C . 1961-04-04

  机译： 用于制造半导体电极系统的程序，其中一个或多个触点通过合金放置在半导体主体中，然后提供蒂尔弗塞尔斯莱德。

• 4. A method for the production of semiconducting single crystals. [P] . 德国专利： DE68902249T2 . 1993-01-07

  机译： 一种生产半导体单晶的方法。

• 5. method for producing semiconducting single crystals. [P] . 德国专利： DE68902249D1 . 1992-09-03

  机译： 半导体单晶的制造方法。

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