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Microwave amplifier and oscillator utilizing negative resistance device

机译:利用负电阻装置的微波放大器和振荡器

摘要

1,032,601. Negative resistance amplifiers and oscillators; parametric amplifiers. WESTERN ELECTRIC CO. Inc. March 21, 1963 [March 22, 1962 (2)], No. 11195/63. Headings H3B and H3T. [Also in Division H1] A microwave amplifier comprises a waveguide having a slot in one wall, across which is mounted a negative resistance device such as a tunnel or PNPN diode; radiation from the slot is prevented by mounting over it external to the waveguide a second resonant waveguiding structure. The slot 12 (Fig. 1, not shown), may conveniently be formed in a plate 11 fitting into an aperture in the waveguide, the crystal diode 13 having one terminal attached to a wall of the slot and the other to a lead 14 passing through a bore in the plate 11, forming with lead 14 a decoupling capacitor for signal frequency. The lead 14 serves to apply operating bias to the crystal diode 13. The second resonant waveguiding structure may comprise a rectangular guide 21, Fig. 2, tuned by means of a movable piston 22. The arrangement, which may also be used as an oscillator, is primarily intended for use in increasing the power available and/or the degree of amplification. Thus a number of amplifier units may be evenly spaced around a circumference of a circular waveguide to increase the power handled (Fig. 4, not shown) or two or more circumferences spaced a quarter-wavelength apart so as to increase both power and gain (Fig. 9, not shown). In another embodiment a number of amplifier units are spaced at quarter-wave intervals along a rectangular waveguide, alternate units being placed on opposite sides of the waveguide (Fig. 6, not shown). In a further embodiment a number of diodes 34 (Fig. 3, not shown) are placed in slots 33 around the circumference of a concentrio waveguide 31, 32 and are enclosed in a further waveguide comprising a concentric cylinder 35 which is tuned by means of a movable annular conducting ring 38. In operation as an amplifier, the waveguide 53 (Fig. 5, not shown) containing the amplifying negativeresistance device is terminated in reflecting piston 55 and connected to one port of a threeport circulator 50, to the other ports of which are respectively connected the source 51 and load 52. In order that the coupling between the negative resistance device and waveguide may be varied, the slot 72, Fig. 7, in which the device 73 is located, may be formed in a slide 71 having tapered sides 78 and operating in a crossslot in the waveguide 70, the second waveguiding structure 74 being mounted on the slide 71. In an amplifier a number of such units may be located at quarter-wave intervals along a rectangular waveguide, alternate units being placed on opposite sides of the waveguide (Fig. 8, not shown). The arrangement may also be used as a paramagnetic amplifier. In this a variable-capacity diode 102, Fig. 10, is located in a slot in one wall of waveguide 100 in which the signal is transmitted and the second resonant waveguide structure comprises a tapering transition section 105 to which is connected a second smaller waveguide 106 by which the pump frequency is introduced.
机译:1,032,601。负电阻放大器和振荡器;参数放大器。 WESTERN ELECTRIC CO。Inc. 1963年3月21日[1962年3月22日(2)],第11195/63号。标题H3B和H3T。 [也在H1分部中]微波放大器包括在一个壁上具有缝隙的波导,在该缝隙上安装负电阻装置,例如隧道或PNPN二极管;通过将第二谐振波导结构安装在波导外部,可以防止来自狭缝的辐射。缝隙12(图1,未示出)可以方便地形成在装配到波导中的孔中的板11中,晶体二极管13的一个端子附接到缝隙的壁上,另一端子附接到通过的引线14上。通过板11中的孔,并用引线14形成用于信号频率的去耦电容器。引线14用于向晶体二极管13施加工作偏压。第二谐振波导结构可以包括图2所示的矩形导向器21,该矩形导向器借助于可移动活塞22进行调谐。该装置也可以用作振荡器。 ,主要用于增加可用功率和/或放大程度。因此,多个放大器单元可以围绕圆形波导的圆周均匀分布,以增加处理的功率(图4,未显示),或者两个或多个圆周间隔为四分之一波长,从而增加功率和增益(图9,未示出)。在另一个实施例中,多个放大器单元沿着矩形波导以四分之一波间隔间隔开,替代单元被放置在波导的相对侧上(图6,未示出)。在另一个实施例中,多个二极管34(图3,未示出)被放置在围绕集中波导31、32的圆周的狭槽33中,并且被封装在包括同心圆柱体35的另一个波导中,该同心圆柱体35借助于一个可移动的环形导电环38。在作为放大器工作时,包含放大负电阻装置的波导53(图5,未示出)在反射活塞55处终止,并与三端口循环器50的一个端口相连,与另一个端口相连。其中的两个分别与源51和负载52相连。为了改变负电阻装置和波导之间的耦合,装置73所位于的图7中的槽72可以形成在滑块中。具有锥形侧面78并在波导70中的缝隙中工作的第一波导71,第二波导结构74安装在滑块71上。在放大器中,许多这样的单元可以沿着矩形以四分之一波长间隔设置。波导,交替的单元被放置在波导的相对两侧(图。 8,未显示)。该装置也可以用作顺磁性放大器。在这种情况下,图10中的可变容量二极管102位于波导100的一个壁中的槽中,在该槽中传输信号,并且第二谐振波导结构包括逐渐变细的过渡部分105,第二较小的波导与之连接。通过其引入泵浦频率的106。

著录项

  • 公开/公告号US3160826A

    专利类型

  • 公开/公告日1964-12-08

    原文格式PDF

  • 申请/专利权人 BELL TELEPHONE LABORATORIES INCORPORATED;

    申请/专利号US19620181589

  • 发明设计人 MARCATILI ENRIQUE A. J.;

    申请日1962-03-22

  • 分类号H03F3/12;H03F7/04;

  • 国家 US

  • 入库时间 2022-08-23 15:30:41

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