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process for the surface of a base isolierendem watermelons with material by zerstaeubung

机译:zerstaeubung的材料对等基艾伦迪南西瓜表面的处理

摘要

PICT:1056987/C6-C7/1 A cathode sputtering method for coating a surface of a substrate with an electrically insulating material, the insulating material being capable of being reduced to a stable conducting compound, comprises cathode sputtering the reduced compound either in an oxidizing atmosphere or in an inert atmosphere followed by oxidation, to produce a coating which is chemically identical with the original unreduced insulating material. The substrate may be silica and the insulating coating may be of barium lanthanum titanate. The insulating material may be reduced at an elevated temperature in hydrogen or other reducing gas or gas mixture, and the gas used for oxidizing may be oxygen or a gaseous oxide of nitrogen or sulphur, alone or mixed with an inert gas. As shown in Fig.1 the sputtering apparatus comprises a silica substrate 14 ink masked at 25, an earthed stainless steel anode 4, substrate heater 15 and a cathode 1 on a copper base block 2, the latter being mounted on a water cooled copper tube 3 with a cover 18 supported by a copper shield 20. The apparatus is contained in a glass dome 26 to which gas can be introduced at 10 or from which gas can be removed at 12. A film capacitor is made by sputtering the following three layers in sequence on to an appropriately masked silica substrate, 1) platinum using an argon atmosphere at 5 x 10-2 Torr, 2) barium lanthanum titanate by sputtering the reduced compound in an atmosphere containing argon and oxygen in a ratio of 5:1 at 5 x 10-2 Torr, and 3) aluminium in vacuum.
机译:一种阴极溅射方法,其用电绝缘材料涂覆基板的表面,该绝缘材料能够还原成稳定的导电化合物,该方法包括阴极溅射还原的化合物。在氧化气氛中或在惰性气氛中接着氧化,以产生与原始未还原绝缘材料化学相同的涂层。基底可以是二氧化硅,并且绝缘涂层可以是钛酸镧镧。可以在高温下在氢气或其他还原性气体或气体混合物中还原绝缘材料,并且用于氧化的气体可以是单独的氧气或与惰性气体混合的氧气或氮气或硫的气态氧化物。如图1所示,溅射设备包括以25掩蔽的二氧化硅衬底14,接地的不锈钢阳极4,衬底加热器15和位于铜基块2上的阴极1,后者安装在水冷铜管上。如图3所示,该装置具有由铜屏蔽罩20支撑的盖18。该装置包含在玻璃穹顶26中,该玻璃穹顶可以在10引入气体,或者在12可以从其中除去气体。通过溅射以下三层来制造薄膜电容器。依次在适当掩蔽的二氧化硅基板上依次进行操作:1)在5 x 10-2 Torr的氩气气氛下使用铂,2)在含氩气和氧气的比例为5:1的气氛中通过溅射还原的化合物,将钛酸钡镧5 x 10-2托,以及3)真空中的铝。

著录项

  • 公开/公告号DE1515307A1

    专利类型

  • 公开/公告日1969-09-11

    原文格式PDF

  • 申请/专利权人 INTERNATIONAL STANDARD ELECTRIC CORP.;

    申请/专利号DE19661515307

  • 发明设计人 BIRRELL TOOMBSPETER ALAN;

    申请日1966-08-04

  • 分类号C23C15/00;

  • 国家 DE

  • 入库时间 2022-08-23 12:11:39

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