A method for the production of half conductor arrangements of the same richter

• 1. 用于制造带有比其他区相对更厚的局部受控区的薄半导体晶片的方法和装置以及这种晶片 [P] . 中国专利： CN106233468B . 2019.11.29
• 2. 用于制造带有比其他区相对更厚的局部受控区的薄半导体晶片的方法和装置以及这种晶片 [P] . 中国专利： CN106233468A . 2016-12-14
• 3. A method for the simultaneous production of a larger number of half conductor is equal to richter arrangements with one or more half conductor bodies [P] . 德国专利： DE1439272B2 . 1977-05-26

  机译： 同时生产大量半导体的方法等于具有一个或多个半导体体的更丰富的布置

• 4. A method for the production of half conductor arrangements of the same richter [P] . 法国专利： FR2119924B1 . 1978-06-02

  机译： 一种用于制造相同更浓的半导体装置的方法

• 5. A method for the production of half conductor arrangements of the same richter [P] . 德国专利： DE2054677B2 . 1977-12-22

  机译： 一种用于制造相同更浓的半导体装置的方法

• 1. Combining Geomatics and Conventional Methods for Monitoring Forest Conditions under Different Governance Arrangements [J] . Ambika P. Gautam 山地科学学报（英文版） . 2006,第004期
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• 3. Preconditioned Iterative Methods for Algebraic Systems from Multiplicative Half-Quadratic Regularization Image Restorations [J] . Zhong-Zhi Bai, Yu-Mei Huang, Michael K. Ng, 高等学校计算数学学报（英文版） . 2010,第004期
• 4. Test of the Possible Application of the Half-Way Bounce-Back Boundary Condition for Lattice Boltzmann Methods in Complex Geometry [J] . WAN Rong-Zheng, FANG Hai-Ping 理论物理通讯（英文版） . 2001,第005期
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• 9. Some properties of wing and half-body arrangements at supersonic speeds [R] . Migotsky, Eugene, Adams, Gaynor, J 1957

• 1. Study of Half-Metallicity of Half-Heusler GeLiCa by Using mBJ Potential Method [J] . T. Malsawmtluanga ,R. K. Thapa . 材料科学与工程：中英文A版 . 2017,第006期
• 2. 一种用于透射电镜加速极的制造方法 [C] . 孙占峰 ,刘亚琪 . 2012年全国电子显微学学术会议 . 2012
• 3. 一种新型半导体制造先进过程控制：双近似逆系统反馈控制 [A] . 华盛 . 2008