PROCESS FOR SIMULTANEOUS DIFFUSION OF GROUP III-GROUP V INTERMETALLIC COMPOUNDS INTO SEMICONDUCTOR WAFERS

• 1. III‑V族元素的氧化物的去除液及去除方法、III‑V族元素的化合物的处理液、III‑V族元素的抗氧化液、以及半导体基板的处理液及半导体基板产品的制造方法 [P] . 中国专利： CN107210215A . 2017-09-26
• 2. III-V族化合物半导体基板和带有外延层的III-V族化合物半导体基板 [P] . 中国专利： CN110234801B . 2021.01.12
• 3. PROCESS FOR SIMULTANEOUS DIFFUSION OF GROUP III-GROUP V INTERMETALLIC COMPOUNDS INTO SEMICONDUCTOR WAFERS [P] . 法国专利： FR2211758B1 . 1977-08-12

  机译： 同时将III族基团V间化合物扩散到半导体晶片中的过程

• 4. PROCESS FOR SIMULTANEOUS DIFFUSION OF GROUP III-GROUP V INTERMETALLIC COMPOUNDS INTO SEMICONDUCTOR WAFERS [P] . 日本专利： JPS4998187A . 1974-09-17

  机译： 同时将III族基团V间化合物扩散到半导体晶片中的过程

• 5. PROCESS FOR SIMULTANEOUS DIFFUSION OF GROUP III-GROUP V INTERMETALLIC COMPOUNDS INTO SEMICONDUCTOR WAFERS [P] . 法国专利： FR2211758A1 . 1974-07-19

  机译： 同时将III族基团V间化合物扩散到半导体晶片中的过程

• 1. Modeling of photolithography process in semiconductor wafer fabrication systems using extended hybrid Petri nets [J] . ZHOU Bing-hai, PAN Qing-zhi, WANG Shi-jin, 中南大学学报（英文版） . 2007,第003期
• 2. An analytical model to predict diffusion induced intermetallic compounds growth in Cu-Sn-Cu sandwich structures [J] . Yuexing Wang, Yao Yao, Leon Keer 力学快报(英文版) . 2020,第001期
• 3. Numeric simulation of thickness of intermetallic compounds in interface zone of diffusion bonding for Cu and Al [J] . 李亚江, 吴会强, 陈茂爱, 中国有色金属学报（英文版） . 2001,第006期
• 4. Temporary and permanent wafer bonding for reliable backside processing of compound semiconductor wafers [C] . V. Dragoi, T. Glinsner, P. Lindner, International symposium on compound semiconductor . 2002
• 5. Synthesis and physicochemical characterization of diamond-like semiconductors and intermetallic compounds using high temperature solid-state synthesis, polychalcogenide flux synthesis and the solid-state microwave synthetic method [D] . Lekse, Jonathan W. 2009
• 6. Interdiffusion and Intermetallic Compounds at Al/Cu Interfaces in Al-50vol.Cu Composite Prepared by Solid-State Sintering [O] . Dasom Kim, Kyungju Kim, Hansang Kwon 2021
• 7. Preparation of rare earth - transition metal (RE: Y, Tm: Co) intermetallic compounds by calciothermic reduction diffusion process [O] . M. Ilayaraja, L. John Berchmans, Sankara Raman Sankaranarayanan 2014
• 8. Diffusion Resistant, High-Purity Wafer Carriers For SI Semiconductor Production [R] . Tiegs, T. N., Leaskey, L. 2000

• 1. Superplasticity and Diffusion Bonding of Ti_3AI Intermetallic Compounds [J] . Yi GUO Peng LIU Yiwen WU Zijing HE Dong LI Institute of Metal ResearchAcademia SinicaShenyang110015China . 材料科学技术：英文版 . 1993,第1期
• 2. Effects of Cu addition on growth of Au-Sn intermetallic compounds at Sn-xCu/Au interface during aging process [J] . TIAN YanhongWANG Chunqingand LIU Wei Microjoining LaboratoryState Key Laboratory of Advanced Welding Production TechnologyHarbin Institute of TechnologyHarbin 15000China . 稀有金属：英文版 . 2007,第S1期
• 3. 脉冲DE-GMAW焊铝/钢界面金属间化合物扩散过程数值研究 [C] . He Xiaoying ,何笑英 ,Huang Jiankang . 第二十次全国焊接学术会议 . 2015
• 4. 硫族化合物半导体纳米晶的制备及其光伏应用 [A] . 邹彧 . 2011