Capacitive integrated semiconductor cct. - has doped substrate and parallel layers doped to opposite conductivity embedded in substrate

摘要

The integrated single-transistor memory storage element of capacitive type has a substrate doped into a first conductivity state. The locations intended for the capacitors are provided with several parallel layers doped into an opposite conductivity state. The embedded layers are connected in parallel by a connecting layer of identical conductivity. Preferably the layers are parallel to the substrate surface, one of them abutting the substrate surface and forming an inversion layer. Typically the substrate and the layers are of silicon. The layers are typically connectable to a pole of a voltage source, thus forming one electrode of the capacitor, the other one being formed by a metallised track on the substrate with an intermediate insulant.