Bubble domain structuring in bubble domain memory plane

摘要

Defining the structuring of bubble domains in a magnetizable layer of a bubble domain memory plane is determined by modifying the magnetic characteristics of the magnetizable layer in the confinement area. The bubble domain memory plane is comprised of a non-magnetic Gadolinium Gallium Garnet (GGG) layer which is a supporting layer upon which is formed by the liquid phase epitaxy (LPE) method a plurality of magnetizable layers in each of which a bubble domain is capable of being generated and sustained. Upon the memory plane are formed, as by any of many well-known deposition techniques, a matrix array of a parallel set of horizontally oriented X drive lines and an orthogonally oriented parallel set of Y drive lines. Each X drive line, Y drive line intersection of the matrix array defines a memory area having four quadrants. In only one of the four quadrants is there provided a bubble domain supporting magnetizable layer, all other areas of the memory plane having no magnetizable layer or a magnetizable layer of an insufficient thickness to support bubble domains therein. Accordingly, in only one of the four quadrants of each of the memory areas is there a magnetizable layer of sufficient thickness to support a bubble domain thereat.