HIGH FREQUENCY ION IMPLANTED PASSIVATED SEMI-CONDUCTOR DEVICES AND MICROWAVE INTEGRATED CIRCUITS AND PLANAR PROCESSES FOR FABRICATING THE SAME

摘要

1532579 Semiconductor devices HUGHES AIRCRAFT CO 4 May 1977 [21 May 1976] 18669/77 Heading H1K A micro-wave generating semiconductor device is manufactured in a high-resistivity semiconductor substrate 14 by forming an insulating ion implantation mask 18 and implanting therethrough firstly a buried region 22 (P-type in an N-type substrate) then further regions above the region 22 (e.g. a flat profile P-type zone 32 and an NSP+/SP region 42), removing substrate material from the rear surface to form a recess 54 exposing the buried region, and providing ohmic contacts 56, 62 and preferably also heat sinks 58, 64 to the exposed regions 42 and 22. The device may be disvate or may be integrated with a similarly manufactured PIN modulator diode (Fig. 12, not shown). Other integrated arrangements are also mentioned.