halfgeleiderinrichting with a halfgeleiderlichaam, which to a hoofdoppervlak the halfgeleideroppervlak locally with a layer is covered.and method for the manufacture of planaire semiconductor devices.

摘要

Semiconductor devices are described having on a semiconductor surface an insulating layer having a first portion of silicon oxide without silicon nitride and a second portion of silicon oxide covered with silicon nitride. These layers are provided so as to establish at the semiconductor surface certain desired concentrations or densities of semiconductive surface states and surface or oxide charges in order to control the performance of the device.