METHOD FOR POLISHING SEMICONDUCTOR GALLIUM PHOSPHIDE PLANAR SURFACES

摘要

An improved method for polishing gallium phosphide planar surfaces is disclosed comprising positioning gallium phosphide wafers or slices in close adjacency to a polishing medium providing a relative motion between said wafer and polishing medium while providing a controlled predetermined flow of OBr ions to said wafers and polishing medium and continuing the relative motion until the wafer surface is polished to a smooth and featureless condition whereupon the wafers are washed and removed from the polishing mechanism.